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| # | Research Title | DOI | Publication Year |
|---|---|---|---|
| 1 | Salhi A, Sexton J, Muttlak SG, Abdulwahid O, Hadfield A, Missous M. InGaAs/AlAs/GaAs metamorphic asymmetric spacer layer tunnel (mASPAT) diodes for microwaves and millimeter-waves detection. Journal of Applied Physics. 2020 May 21;127(19):194505 | 2020 | |
| 2 | O. S. Abdulwahid, I. Kostakis, S. G. Muttlak, J. Sexton, K.W. Ian and M. Missous, “Physical Modelling of InGaAs-InAlAs APD and PIN Photodetectors for >25Gb/s Data Rate Applications”, IET Optoelectronics, DOI: 10.1049/iet-opt.2018.5030 | 2019 | |
| 3 | Saad. G. Muttlak, Ioannis Kostakis, Omar S. Abdulwahid, J. Sexton, and M. Missous, “A Low-Cost InP-InGaAs PIN-HBT Based OEIC for up to 20Gb/s Optical Communication Systems”, IET Optoelectronics, 2019 Jan 11;13(3):144-50 | 2019 | |
| 4 | Saad G. Muttlak, O. S. Abdulwahid, J. Sexton, M.J. Kelly and M. Missous, “InGaAs/AlAs Resonant Tunneling Diodes for THz Applications: An Experimental Investigation”, IEEE Journal of the Electron Devices Society, DOI: 10.1109/JEDS.2018.2797951 | 2018 | |
| 5 | .O. S. Abdulwahid, J. Sexton, I. Kostakis, K. Ian, and M. Missous, "Physical modelling and experimental characterisation of InAlAs/InGaAs avalanche photodiode for 10 Gb/s data rates and higher," IET Optoelectronics, vol. 12, no. 1, pp. 5-10, 2017 | 2017 |
| certificate | General Specialization | Subspecialty | Year |
|---|---|---|---|
| PhD | 2019 | ||
| Master\'s Degree | 2013 | ||
| Bachelor\'s Degree | 2010 |
| Subject Name | College | Department | Stage | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| لا توجد بيانات | |||||||||||||
Total Number: 220