MODULE DESCRIPTOR FORM
نموذج وصف المادة الدراسية
Module Information معلومات المادة الدراسية |
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Module Title |
Fundamentals of Electronics |
Module Delivery |
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Module Type |
Core |
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Module Code |
ATU11211 |
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ECTS Credits |
8 |
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SWL (hr/sem) |
200 |
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Module Level |
UGx11 1 |
Semester of Delivery |
2 |
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College |
NETC |
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Module Leader |
Dr. Marwa Jalil Mohsen |
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Module Leader’s Acad. Title |
Lecturer |
Module Leader’s Qualification |
Ph.D. |
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Module Tutor |
None |
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None |
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Peer Reviewer Name |
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Review Committee Approval |
01/06/2023 |
Version Number |
1.0 |
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Relation With Other Modules العلاقة مع المواد الدراسية الأخرى |
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Prerequisite module |
None |
Semester |
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Co-requisites module |
None |
Semester |
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Module Aims, Learning Outcomes and Indicative Contents أهداف المادة الدراسية ونتائج التعلم والمحتويات الإرشادية |
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Module Aims أهداف المادة الدراسية
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After successful completion of this course the student will be able to understand:
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Module Learning Outcomes
مخرجات التعلم للمادة الدراسية |
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Indicative Contents المحتويات الإرشادية |
Indicative content includes the following: Introduction to aviation electronics and its role in aircraft systems.
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Strategies |
The main strategy that will be adopted in delivering this module is to encourage students’ participation in the exercises, while at the same time refining and expanding their critical thinking skills. This will be achieved through classes, interactive tutorials and by showing the students how the construction members exposed to external loads .This can be done by films or videos or by the ready structural software.
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Student Workload (SWL) الحمل الدراسي للطالب |
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Structured SWL (hr/sem) (SSWL) الحمل الدراسي المنتظم للطالب خلال الفصل |
93 |
Structured SWL (h/w) الحمل الدراسي المنتظم للطالب أسبوعيا |
93/15 =6 |
Unstructured SWL (hr/sem)(USSWL) الحمل الدراسي غير المنتظم للطالب خلال الفصل |
82 |
Unstructured SWL (h/w) الحمل الدراسي غير المنتظم للطالب أسبوعيا |
82/15=5 |
Total SWL (hr/sem) الحمل الدراسي الكلي للطالب خلال الفصل |
175 |
Module Evaluation تقييم المادة الدراسية |
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As |
Time/Number |
Weight (Marks) |
Week Due |
Relevant Learning Outcome |
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Formative assessment |
Quizzes |
2 |
10% (10) |
5, 10 |
LO #1, 2, 10 and 11 |
Assignments |
2 |
10% (10) |
2, 12 |
LO # 3, 4, 6 and 7 |
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Projects / Lab. |
1 |
10% (10) |
Continuous |
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Report |
1 |
10% (10) |
13 |
LO # 5, 8 and 10 |
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Summative assessment |
Midterm Exam |
1.5 hr |
10% (10) |
7 |
LO # 1-7 |
Final Exam |
3 hr |
50% (50) |
16 |
All |
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Total assessment |
100% (100 Marks) |
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Delivery Plan (Weekly Syllabus) المنهاج الاسبوعي النظري |
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Week |
Material Covered |
Week |
Syllabus |
1+2 |
Bipolar junction transistor, BJT operation, transistor configurations; common base configuration common emitter configuration, and common collector configuration, DC load line, Limits of operation. |
3 |
Analysis of Fixed bias configuration, voltage divider bias configuration. |
4 |
Collector feedback configuration; saturation level and load line analysis, emitter flower configuration, Miscellaneous bias configuration, Design operation. |
5 |
Transistor switching networks, Multiple BJT networks, Troubleshooting techniques, bias stabilization. |
6+7 |
BJTAC analysis; amplification in AC domain, BJT modeling, the “r e” transistor model, common-emitter fixed bias configuration, voltage divider bias configuration, CE emitter bias configuration, emitter flower configuration, common base configuration, collector feedback configuration, determine the current and voltage gain, two-port system approach, cascade system, frequency response of BJT amplifiers. |
8+9 |
Field effect transistors, FET types; junction FETs, MOSFETs, and MESFETs, construction and characteristics of JFETs, transfer characteristics, specification sheets ( JFETs), depletion type MOSFET, enhancement type MOSFET, MOSFET Handling, VMOS and UMOS power. |
10+11 |
FET fixed bias configuration, self-bias configuration, voltage divider configuration, common-gate configuration, special case VGS=0 V, p-channel FETs, universal JFET bias curve, practical applications. |
12+13 |
FET amplifiers, JFET small signal model, Fixed bias configuration, self-bias configuration, voltage divider configuration, common gate configuration, source follower (common-drain) configuration, depletion type MOSFET, enhancement type MOSFET, E-MOSFET drain feedback configuration, E-MOSFET voltage divider configuration, Designing FET amplifier networks, cascade configuration, troubleshooting, practical application. |
14+15 |
BJT and JFET frequency response, Logarithms, decibel, general frequency consideration, normalization process, low frequency analysis, Bode plot, low frequency response-BJT amplifier with RL, impact Rs on the BJT low frequency response, low-frequency response FET amplifier, Miller effect capacitance, high-frequency response -BJT amplifier, high frequency response- FET amplifier, multistage frequency effect, square wave testing. |
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Week 16 |
Final Exam |
Learning and Teaching Resources مصادر التعلم والتدريس |
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Text |
Available in the Library? |
Required Texts |
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Yes |
Recommended Texts |
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No |
Websites |
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APPENDIX:
GRADING SCHEME مخطط الدرجات |
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Group |
Grade |
التقدير |
Marks (%) |
Definition |
Success Group (50 - 100) |
A - Excellent |
امتياز |
90 - 100 |
Outstanding Performance |
B - Very Good |
جيد جدا |
80 - 89 |
Above average with some errors |
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C - Good |
جيد |
70 - 79 |
Sound work with notable errors |
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D - Satisfactory |
متوسط |
60 - 69 |
Fair but with major shortcomings |
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E - Sufficient |
مقبول |
50 - 59 |
Work meets minimum criteria |
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Fail Group (0 – 49) |
FX – Fail |
مقبول بقرار |
(45-49) |
More work required but credit awarded |
F – Fail |
راسب |
(0-44) |
Considerable amount of work required |
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Note: |
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NB Decimal places above or below 0.5 will be rounded to the higher or lower full mark (for example a mark of 54.5 will be rounded to 55, whereas a mark of 54.4 will be rounded to 54. The University has a policy NOT to condone "near-pass fails" so the only adjustment to marks awarded by the original marker(s) will be the automatic rounding outlined above. |
ملاحظة: هذا النموذج تم وضعه وتقديمه من قبل مديرية ضمان الجودة في وزارة التعليم العالي والبحث العلمي